WNSC10650T

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications

 

  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED/OLED TV
  • Motor Drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC10650T VRRM repetitive peak reverse voltage       650 V
IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tc ≤ 153 °C;     10 A
Tj junction temperature       175 °C
VF forward voltage IF = 10 A; Tj = 25 °C;   1.5 1.7 V
Qr recovered charge IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C;         16   nC
Datasheet
Chemical Content

Chemical Content - WNSC10650T

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.