ACTT8-800CTN
AC Thyristor Triac power switch in a SOT78 (TO-220AB) plastic package with self- protective clamping capabilities against low and high energy transients. This "series CTN" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required
Features and Benefits
- Clamping structure ensuring safe high over-voltage withstand capability
- High junction operating temperature capability (Tj(max) = 150 °C)
- High minimum IGT for guaranteed immunity to gate noise
- Full cycle AC conduction
- Over-voltage withstand capability to IEC 61000-4-5
- Pin compatible with standard triacs
- Protective self turn-on capability for high energy transients
- Safe clamping capability for low energy over-voltage transients
- Less sensitive gate for high noise immunity
- Triggering in three quadrants only
- Planar passivated for voltage ruggedness and reliability
- High commutation capability with maximum false trigger immunity
- Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
- Package is RoHS compliant
- Package meets UL94V0 flammability requirement
Applications
- AC fan, pump and compressor controls
- Highly inductive, resistive and safety loads
- Large and small appliances (White Goods)
- Reversing induction motor controls
- Applications subject to high temperature (Tj(max) = 150 °C)
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
ACTT8-800CTN | VDRM | repetitive peak offstate voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 130 °C; Fig. 1; Fig. 2; Fig. 3 | 8 | A | |||
ITSM | non-repetitive peak on | full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 | 80 | A | |||
ITSM | non-repetitive peak forward current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 88 | A | |||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 | 5 | 35 | mA | ||
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 | 5 | 35 | mA | ||||
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 | 5 | 35 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C; Fig. 10 | 40 | mA | |||
Vt | on-state voltage | IT = 10 A; Tj = 25 °C; Fig. 11 | 1.5 | V | |||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 4000 | V/μs | |||
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 2000 | V/μs | |||||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition | 12 | A/ms |