BT139-800G

Planar passivated four quadrant triac in a SOT78 (T0-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.

Features and Benefits
  • High voltage capability
  • Least sensitive gate for highest noise immunity
  • High minimum IGT for guaranteed immunity to gate noise
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in all four quadrants
Applications

 

  • General purpose motor controls
  • General purpose switching

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT139-800G VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C     16 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     155 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     170 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C   5 50 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C   8 50 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C   10 50 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C   22 100 mA
IH holding current VD = 12 V; Tj = 25 °C   6 60 mA
VT on-state voltage IT = 20 A; Tj = 25 °C   1.2 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200 250   V/µs
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 95 °C; dIcom/dt = 7.2 A/ms; IT = 16 A; gate open circuit 10 20   V/µs
Datasheet
Chemical Content

Chemical Content - BT139-800G

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