BT169G

Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.

Features and Benefits
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Sensitive gate
Applications
  • Ignition circuits
  • Lighting ballasts
  • Protection circuits
  • Switched Mode Power Supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT169G VDRM repetitive peak off-state voltage       600 V
VRRM repetitive peak reverse voltage       600 V
IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C     0.5 A
IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C     0.8 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     8 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     9 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C   50 200 µA
IL latching current VD = 12 V; IG = 0.5 mA; Tj = 25 °C   2 6 mA
IH holding current VD = 12 V; Tj = 25 °C   2 5 mA
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 1 kμ; (VDM = 67% of VDRM); exponential waveform 500 800   V/µs
VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit   25   V/µs
Datasheet
Chemical Content

Chemical Content - BT169G

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