BYV60W-600P

Ultrafast power diode in a SOD142 (2-lead TO247) plastic package.

Features and Benefits
  • Fast switching and soft reverse recovery characteristics
  • Low forward voltage drop
  • Low leakage current
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
Applications
  • UPS
  • EV Charger
  • Welding Machine
  • Air Conditioner
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYV60W-600P VRRM repetitive peak reverse voltage       600 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 129 °C; square-wave pulse     60 A
IFRM repetitive peak forward current δ = 0.5 ; tp = 25 μs; Tmb ≤ 129 °C; square-wave pulse     120 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     600 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     660 A
VF forward voltage IF = 60 A; Tj = 25 °C;   1.55 2 V
IF = 60 A; Tj = 150 °C   1.2 1.6 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs;Tj = 25 °C;     55 ns
IF = 60 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C;   53   ns
IF = 60 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C;   120   ns
Datasheet
Chemical Content

Chemical Content - BYV60W-600P

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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