WNB111S5APTS

Ultrafast power diode (Bare die after sawn).

Features and Benefits
  • Fast reverse recovery
  • Low leakage current
  • Low forward voltage drop
  • Bare die
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNB111S5APTS VRRM* repetitive peak off-state voltage    -  - 600 V
IF(AV)** average forward current δ = 0.5; square-wave pulse  -  - 15 A
VF** forward voltage IF = 15 A; Tj = 25 °C  - 1.4 1.8 V
trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C  - 28 60 ns
Datasheet
Chemical Content

Chemical Content - WNB111S5APTS

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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